Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

Abstract We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on E-mode wafers in this work. The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load. The function of the RTL comparators is finally verified...

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Published inJournal of semiconductors Vol. 42; no. 2; pp. 24103 - 118
Main Authors Li, Xiangdong, Geens, Karen, Amirifar, Nooshin, Zhao, Ming, You, Shuzhen, Posthuma, Niels, Liang, Hu, Groeseneken, Guido, Decoutere, Stefaan
Format Journal Article
LanguageEnglish
Published Department of Electrical Engineering,KU Leuven,Leuven 3001,Belgium%imec,Leuven 3001,Belgium 01.02.2021
imec,Leuven 3001,Belgium
Subjects
resistor-transistor logic(RTL)
p-GaN
comparator
undervoltage lockout(UVLO)
GaN ICs
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Summary:Abstract We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on E-mode wafers in this work. The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load. The function of the RTL comparators is finally verified by a undervoltage lockout (UVLO) circuit. The compatibility of this circuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/42/2/024103