Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 48; no. 2R; p. 26504
Main Authors Miura, Yutaka, Kasahara, Yu, Habuka, Hitoshi, Takechi, Naoto, Fukae, Katsuya
Format Journal Article
LanguageEnglish
Published 01.02.2009
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.026504