Fabrication of amorphous silicon nanocones by bias-enhanced microwave plasma CVD

We present a simple growth of highly aligned silicon nanocones by using bias-enhanced microwave plasma CVD of gas mixture of hydrogen and methane. SiO 2 and nickel films were used as a silicon precursor and a seeding material for patterning cone structure, respectively. SEM studies showed that the n...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 137; no. 1; pp. 205 - 209
Main Author Chaisitsak, Sutichai
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.02.2007
Subjects
Amorphous silicon
Microwave plasma CVD
Nanocones
Silicon dioxide
Amorphous silicon
Microwave plasma CVD
Nanocones
Silicon dioxide
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Summary:We present a simple growth of highly aligned silicon nanocones by using bias-enhanced microwave plasma CVD of gas mixture of hydrogen and methane. SiO 2 and nickel films were used as a silicon precursor and a seeding material for patterning cone structure, respectively. SEM studies showed that the nanocones have nanometer-size tips and sub micrometer-size bases. TEM analysis revealed that the nanocones have amorphous structure with nickel on the tips. The model for formation of silicon nanostructures will also be suggested.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2006.11.019