Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates

• Published in: Physica. B, Condensed matter Vol. 560; pp. 204 - 207
• Main Authors: Ur Rehman, Khalid Mehmood, Liu, Xiansong, Riaz, Muhammad, Yang, Yujie, Feng, Shuangjiu, Khan, Muhammad Wasim, Ahmad, Ashfaq, Shezad, Mudssir, Wazir, Z., Ali, Zulfiqar, Batoo, Khalid Mujasam, Adil, Syed Farooq, Khan, Mujaeeb, Raslan, Emad H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2019; Elsevier BV
• Subjects: Absorptivity; Base pressure; Chemical compounds; Crystal structure; Crystallinity; Electromagnetic spectra; Energy gap; Evaporation; Glass substrates; Morphology; Optical measurements; Optical properties; Optoelectronics; Refractivity; Scanning electron microscopy; Spectrophotometer; Structural properties; Thermal evaporation; Thickness; Thin films; Zinc tellurides; ZnTe thin films; ZnTe thin films; Spectrophotometer; Structural properties; Optical measurements; Thermal evaporation
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2019.02.043

In this paper we highlight the fabrication of Zinc Telluride (ZT) thin films grown onto glass substrates at 300 °C with varying thickness, in the range of 200 nm–1000 nm, by adopting the simplistic thermal evaporation technique with base pressure of 10−6 m bar. In addition, their structural and optical characterizations are also studied by exploring the influence of substrate annealing temperature and thickness of the samples. The morphology, crystalline nature and composition analysis of the thin films were done by X–ray diffraction and scanning electron microscopy. These results revealed that the sample having thickness around 1000 nm show crystalline nature while the samples having lower thickness demonstrate amorphous structure. The optical characterizations are described in the form of transmission spectra, refractive index, and absorption coefficient. The band gap values obtained by probing optical data, show that all the samples have direct band gaps in the vicinity of 2.25 eV. This suggests possible applications of ZnTe in optoelectronics devices in the visible region of electromagnetic spectra. •Here is the description of a process for the preparation of graphene oxide in which a little alteration in Hummer's method was done.•In Hummer's method, NaNo3 is used but we have excluded NaNo3 and increased the amount of KMnO4 which resulted in an increase in efficiency of oxidation.•Electrical characterization of sample was accomplished using a complicated ASMEC apparatus to study Capacitance-Voltage (C-V), Current-Voltage (I-V) and Charge Deep-level Transient Spectroscopy investigations.