Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures

We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (Vg) exceeds a critical value, and it persists even after removing Vg...

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Bibliographic Details
Published inCurrent applied physics Vol. 19; no. 1; pp. 50 - 54
Main Authors Oh, Young-Wan, Park, Kyung-Woong, Park, Byong-Guk
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.2019
한국물리학회
Subjects
Electric-field effect
Perpendicular magnetic anisotropy
Underlayer dependence
Voltage controlled magnetic anisotropy
물리학
Voltage controlled magnetic anisotropy
Electric-field effect
Perpendicular magnetic anisotropy
Underlayer dependence
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Summary:We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (Vg) exceeds a critical value, and it persists even after removing Vg. This is in contrast to the volatile VCMA effect and its linear dependence on Vg in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2018.11.004