Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3

• Published in: Current applied physics Vol. 21; pp. 1 - 5
• Main Authors: Lim, Soo Yeon, Kim, Kangwon, Lee, Sungmin, Park, Je-Geun, Cheong, Hyeonsik
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2021; 한국물리학회
• Subjects: Antiferromagnetism; Isotropic Heisenberg model; Magnetic ordering; Manganese phosphorus trisulfide; Raman spectroscopy; 물리학; Antiferromagnetism; Isotropic Heisenberg model; Manganese phosphorus trisulfide; Raman spectroscopy; Magnetic ordering
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2020.09.017

The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few-layer thickness is an important fundamental issue for the understanding of the magnetic ordering in lower dimensions. The antiferromagnetic transition temperature TN of the Heisenberg-type 2D magnetic vdW material MnPS3 was estimated as a function of the number of layers. The antiferromagnetic transition was identified by temperature-dependent Raman spectroscopy, from the broadening of a phonon peak at 155 cm−1, accompanied by an abrupt redshift and an increase of its spectral weight. TN is found to decrease only slightly from ~78 K for bulk to ~66 K for 3L. The small reduction of TN in thin MnPS3 approaching the 2D limit implies that the interlayer vdW interaction is playing an important role in stabilizing magnetic ordering in layered magnetic materials. [Display omitted] •Antiferromagnetic ordering in Heisenberg-type few-layer MnPS3 was investigated.•Néel temperature decreases only slightly from ~78 K for bulk to ~66 K for trilayer.•Linewidth broadening and redshift of P2 Raman mode occur near Néel temperature.