Influence of dopant size on the junction properties of polyaniline

Polyaniline (PANI) doped with sulfate anion (SA) or methane sulfonate anion (MSA) was used to fabricate the Schottky devices: Al/PANI(SA)/ITO and Al/PANI(MSA)/ITO. Current density ( J)–voltage ( V) measurements and AC impedance analysis were used to evaluate the junction parameters of the devices, i...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 116; no. 2; pp. 125 - 130
Main Authors Chung, Sheng-Feng, Wen, Ten-Chin, Gopalan, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.01.2005
Subjects
Dopant
Electronic parameters
Polyaniline
Schottky diodes
Dopant
Schottky diodes
Electronic parameters
Polyaniline
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Summary:Polyaniline (PANI) doped with sulfate anion (SA) or methane sulfonate anion (MSA) was used to fabricate the Schottky devices: Al/PANI(SA)/ITO and Al/PANI(MSA)/ITO. Current density ( J)–voltage ( V) measurements and AC impedance analysis were used to evaluate the junction parameters of the devices, ideality factor, barrier height and rectification ratios. An equivalent circuit was developed and the impedance parameters were evaluated. The differences in junction parameters between the devices were analyzed in terms of the differences in dopability of PANI with the dopants, morphology of the films and mobility of carriers in Al/conducting polymer junction.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2004.09.023