An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling

A simple second-order analytical expression of Fermi-level variation with two-dimensional electron gas density in a high-electron-mobility transistor (HEMT) has been developed. This empirical expression was found to give better results near cutoff and in saturation than the linear approximation curr...

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Bibliographic Details
Published inIEEE electron device letters Vol. 9; no. 3; pp. 136 - 138
Main Authors Kola, S., Golio, J.M., Maracas, G.N.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.03.1988
Institute of Electrical and Electronics Engineers
Subjects
Analytical models
Applied sciences
Electron mobility
Electronics
Equations
Erbium
Exact sciences and technology
Government
HEMTs
Linear approximation
MODFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid state circuits
Temperature
Transistors
Field effect transistor
High electron mobility transistor
Fermi level
Charge carrier concentration
Modeling
Analytic representation
Calculating time
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Summary:A simple second-order analytical expression of Fermi-level variation with two-dimensional electron gas density in a high-electron-mobility transistor (HEMT) has been developed. This empirical expression was found to give better results near cutoff and in saturation than the linear approximation currently being used in many models. It can be used in the development of a more accurate charge control model and hence in the development of an improved analytical model for the HEMT.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.2067