A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900 degree C, th...

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Published inJournal of electronic materials Vol. 31; no. 5; pp. 529 - 534
Main Authors LIM, Y. S, JEONG, J. S, LEE, J. Y, KIM, H. S, SHON, H. K, KIM, H. K, MOON, D. W
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.05.2002
Springer Nature B.V
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Oxidation
Physics
Surface treatments
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Semiconductor materials
Dry process
Surface treatments
Experimental study
High-resolution methods
Optimization
Thickness
Binary alloys
Germanium alloys
Stress relaxation
Silicon alloys
Transmission electron microscopy
Solid solutions
Nonmetals
Heterojunctions
Oxidation
Silicon
Diffusion
Thermal annealing
Depth profiles
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Summary:A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900 degree C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe /Si heterostructures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-002-0110-y