Low-resistance and transparent Ni–Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes

We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni–Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni–Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current–voltage ( I – V ) characteristics....

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 44; no. 6; pp. 735 - 741
Main Authors Kim, Kang-Won, Hong, Hyun-Gi, Song, June-O, Oh, Joon-Ho, Seong, Tae-Yeon
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2008
Subjects
Contact resistivity
Green LED
Light transmittance
Ni–Co solid solution/Au
Ohmic contact
Green LED
Ohmic contact
Light transmittance
Ni–Co solid solution/Au
Contact resistivity
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Summary:We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni–Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni–Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current–voltage ( I – V ) characteristics. However, annealing the sample at 550  ∘C in air results in the formation of ohmic contacts with specific contact resistance of 6.5×10 −4 Ω cm 2. The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2008.09.007