Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs

A set of analytical models based on the Pearson distribution function applied to the modeling of ion implantations in the 3-D structure of FinFETs is presented. The method provides a succinct way to simulate the doping profiles in FinFETs at low computational cost. Compared to previous analytical me...

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Bibliographic Details
Published inIEEE transactions on computer-aided design of integrated circuits and systems Vol. 32; no. 12; pp. 2004 - 2008
Main Authors Liping Wang, Brown, Andrew R., Cheng, Binjie, Asenov, Asen
Format Journal Article
LanguageEnglish
Published IEEE 01.12.2013
Subjects
Analytical models
Doping
FinFETs
Ion implantation
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Summary:A set of analytical models based on the Pearson distribution function applied to the modeling of ion implantations in the 3-D structure of FinFETs is presented. The method provides a succinct way to simulate the doping profiles in FinFETs at low computational cost. Compared to previous analytical methods based on Gaussian distributions, this approach handles more realistic asymmetrical doping distributions arising from ion implantation. A simulation module in C++ has been developed to model ion implantations in FinFETs based on this analytical approach. The simulation module is demonstrated in an example simulation of a silicon-on-insulator FinFET with physical gate length of 20 nm.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2013.2277975