Effect of lithium salt precursors on the physical properties of ZnO-Li thin films
•ZnO-Li thin films sol-gel deposited with different Li salts in precursor.•Li nitrate precursors lead to highly c-axis oriented ZnO-Li films•5% and 10% Li nitrate precursors resulted in maximum optical transmittance•5% Li nitrate precursor yielded the lowest resistivity at 0.057 mΩ/cm of ZnO film Zi...
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Published in | Thin solid films Vol. 725; p. 138644 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2021
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | •ZnO-Li thin films sol-gel deposited with different Li salts in precursor.•Li nitrate precursors lead to highly c-axis oriented ZnO-Li films•5% and 10% Li nitrate precursors resulted in maximum optical transmittance•5% Li nitrate precursor yielded the lowest resistivity at 0.057 mΩ/cm of ZnO film
Zinc oxide (ZnO) thin films were prepared on glass substrates with three different lithium salt precursors (acetate, chloride and nitrates) with Li/Zn atomic ratio varying between 0% and 20% using sol-gel deposition and spin-coating technique. The aim of the work was to compare the physical properties of lithium containing ZnO thin layers obtained using different Li salt precursors; in order to identify the most suitable one. The X-ray diffraction measurements showed that all 500°C annealed films were polycrystalline. The samples prepared from lithium nitrates solutions showed a preferred orientation along c-axis (002) and their crystallites sizes are much larger compared to other Li source. The ultraviolet-visible transmission spectra confirmed the good transparency of all ZnO films with an average transmission around 85 % in the visible range. The optical band gap values varied between 3.19 eV and 3.28 eV. All the results revealed that the ZnO-Li films prepared with LiNO3 exhibit the highest crystallographic quality and the best optical and electrical properties compared to C2H3LiO2 and LiCl containing precursors. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2021.138644 |