Improved Y-domain magnetic film memory elements

Improved versions of a Y-domain memory element are presented. These improvements include element shape, detector configuration, element material composition, and element-substrate interface considerations. It is shown that the element can be optimized for use in a solid-state random-access memory. U...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 24; no. 3; pp. 2060 - 2067
Main Authors Cosimini, G.J., Lo, D.S., Zierhut, L.G., Paul, M.C., Dean, R.H., Matysik, K.J.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.05.1988
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Detectors
Electronics
Exact sciences and technology
Face detection
Magnetic devices
Magnetic fields
Magnetic films
Magnetic hysteresis
Magnetization
Random access memory
Read-write memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid state circuits
Stripline
Borosilicates
Iron Nickel Alloys
Memory
Geometrical configuration
Interdiffusion
Thin film
Substrate
Hysteresis loop
Random access memory(RAM)
Silicon Nitrides
Solid state device
Magnetic domain
Magnetoconductivity
Magnetic field
Magnetic device
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Summary:Improved versions of a Y-domain memory element are presented. These improvements include element shape, detector configuration, element material composition, and element-substrate interface considerations. It is shown that the element can be optimized for use in a solid-state random-access memory. Using a shortened element with 60 degrees head and tail angles and an offset detector produces an output signal which approaches the ideal case.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/20.3401