Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

• Published in: Current applied physics Vol. 19; no. 3; pp. 219 - 223
• Main Authors: Jerng, Sahng-Kyoon, Jeon, Jae Ho, Kim, Youngwook, Kim, Jun Sung, Chun, Seung-Hyun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2019; 한국물리학회
• Subjects: Atomic layer deposition; Bismuth selenide; Molecular beam epitaxy; Topological insulator; van der Waals epitaxy; 물리학; Molecular beam epitaxy; Topological insulator; Bismuth selenide; Atomic layer deposition; van der Waals epitaxy
• ISSN: 1567-1739; 1878-1675; 1567-1739
• DOI: 10.1016/j.cap.2018.07.020

Multi-channel Bi2Se3 thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi2Se3 grew on amorphous Al2O3 even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi2Se3 channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films. [Display omitted] •Topological and non-topological insulator multilayers were fabricated.•Molecular beam epitaxy and atomic layer deposition were ex-situ combined.•Surface conduction channels increased as the number of Bi2Se3 channel increased.