An ISM band CMOS power amplifier design for WLAN

This paper describes the novel chip design and modeling of 2.4 GHz CMOS transistor Class-E power amplifier (PA) to meet IEEE 802.11b/g receiver specifications for WLAN applications. Techniques for accurate modeling of active and passive components at 2.4 GHz WLAN band are presented. The input power...

Full description

Saved in:
Bibliographic Details
Published inInternational journal of electronics and communications Vol. 60; no. 7; pp. 533 - 538
Main Authors Huang, Jhin-Fang, Liu, Ron-Yi, Hong, Pei-Sen
Format Journal Article
LanguageEnglish
Published Elsevier GmbH 03.07.2006
Subjects
Class-E
Efficiency
Power amplifier (PA)
Radio frequency (RF)
WLAN
Radio frequency (RF)
Class-E
WLAN
Efficiency
Power amplifier (PA)
802.11b/g
Online AccessGet full text

Cover

More Information
Summary:This paper describes the novel chip design and modeling of 2.4 GHz CMOS transistor Class-E power amplifier (PA) to meet IEEE 802.11b/g receiver specifications for WLAN applications. Techniques for accurate modeling of active and passive components at 2.4 GHz WLAN band are presented. The input power for this PA is −5 dBm. The overall layout is completed by TSMC 0.25 μ m radio frequency (RF) process. The post-layout simulation indicates that the power-added efficiency (PAE) is about 50.6% and this PA can generate 24.1 dBm of output power from a 1.5 V supply into a 50 Ω load.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1434-8411
1618-0399
DOI:10.1016/j.aeue.2005.10.017