GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems

• Published in: Journal of the Society for Information Display Vol. 24; no. 11; pp. 669 - 675
• Main Author: Templier, François
• Format: Journal Article
• Language: English
• Published: Campbell Blackwell Publishing Ltd 01.11.2016; Wiley Subscription Services, Inc
• Subjects: augmented reality; brightness; color; GaN; LED; manufacturing; microdisplay
• ISSN: 1071-0922; 1938-3657
• DOI: 10.1002/jsid.516

High‐brightness GaN‐based emissive microdisplays can be fabricated with different approaches that are listed and described. They consist either of hybridizing a GaN LED array on a CMOS circuit or building a monolithic component on a single substrate. Using the hybridization approach, two types of 10‐μm pixel pitch GaN microdisplay prototypes were developed: (1) directly driven, 300 × 252 pixels and (2) active‐matrix, 873 × 500 pixels. Brightness as high as 1 × 106 and 1 × 107 cd/m2 for blue and green arrays, respectively, were reached. GaN‐based emissive microdisplays are suitable for augmented reality systems or head‐up displays, but some challenges remain before they can be put in production. High‐brightness GaN‐based emissive microdisplays can be fabricated with different approaches that are listed and described. Using the hybridization approach, we developed two types of 10‐μm pixel pitch GaN microdisplay prototypes. Brightness as high as 1 and 10 million cd/m2 for blue and green arrays, respectively, was reached. GaN‐based emissive microdisplays are suitable for augmented reality systems or head‐up displays.