Direct growth of etch pit-free GaN crystals on few-layer graphene

We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal–organic chemical vapour deposition. Photoluminescence and Raman spectra revealed that GaN crystals grown on graphene layers had mild strain as compared to those grown on sapphire and SiO 2 substrate...

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Published inRSC advances Vol. 5; no. 2; pp. 1343 - 1349
Main Authors Chae, Seung Jin, Kim, Yong Hwan, Seo, Tae Hoon, Duong, Dinh Loc, Lee, Seung Mi, Park, Min Ho, Kim, Eun Sung, Bae, Jung Jun, Lee, Si Young, Jeong, Hyun, Suh, Eun-Kyung, Yang, Cheol Woong, Jeong, Mun Seok, Lee, Young Hee
Format Journal Article
LanguageEnglish
Published 01.01.2015
Subjects
Crystal growth
Crystals
Etch pits
Gallium nitrides
Graphene
Sapphire
Strain
Threading dislocations
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Summary:We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal–organic chemical vapour deposition. Photoluminescence and Raman spectra revealed that GaN crystals grown on graphene layers had mild strain as compared to those grown on sapphire and SiO 2 substrates. Etch pits were not observed on the surface of GaN/graphene, in which threading dislocations were diminished inside the bulk. This is markedly different from GaN/sapphire, in which threading dislocations were present on GaN surfaces. This opens a new possibility that graphene with π electrons and hexagonal symmetry could be an ideal substrate for GaN crystal growth instead of expensive sapphire substrates.
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ISSN:2046-2069
2046-2069
DOI:10.1039/C4RA12557F