Monolithic millimeter wave optical receivers

• Published in: IEEE transactions on microwave theory and techniques Vol. 44; no. 11; pp. 1984 - 1989
• Main Authors: Jinwook Burm, Litvin, K.I., Martin, G.H., Schaff, W.J., Eastman, L.F.
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.1996
• Subjects: Epitaxial layers; Gain; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave transistors; Molecular beam epitaxial growth; Optical buffering; Optical design; Optical receivers; Photodetectors
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.543952

A single stage monolithic millimeter wave optical receiver circuit was designed and fabricated using a metal-semiconductor-metal (MSM) photodetector and a pSeudomorphic Modulation Doped Field Effect Transistors (SMODFET) on a GaAs substrate for possible applications in chip-to-chip and free space communications. The MSM photodetector and the SMODFET epitaxial material were grown by molecular beam epitaxy (MBE). Device isolation was achieved using an epitaxially grown buffer between the MSM detector layers and SMODFET. The photodetector was designed for maximum absorption at optical wavelength of 770 nm light and the SMODFET impedance matching network was optimized for 44 GHz. The monolithic millimeter wave optical receiver circuit achieved 3 dB gain over a photodetector at 39 GHz, which was the limit of the measurement system. TOUCHSTONE model of the circuit indicated 6.6 dB gain over the photodetector and 5.7 dB total gain including the insertion loss of the photodetector at 44 GHz.