Effects of residual stress and interface dislocations on the ionic conductivity of yttria stabilized zirconia nano-films

• Published in: Thin solid films Vol. 574; pp. 66 - 70
• Main Authors: Yeh, Tsung-Her, Lin, Ruei-De, Cherng, Jyh-Shiarn
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2015
• Subjects: Annealing; Deposition; Dislocation; Dislocations; Film thickness; Ionic conductivity; Nano-films; Nanostructure; Residual stress; Yttria stabilized zirconia; Yttria stabilized zirconia; Nano-films; Residual stress; Ionic conductivity; Dislocation
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.11.077

The effects of residual stress and interface dislocations on the ionic conductivity of yttria stabilized zirconia (YSZ) polycrystalline nano-films deposited onto quartz substrate via pulsed-DC magnetron sputtering are systematically studied. The residual stress of YSZ film is evaluated by a cos2αsin2ψ method. The X-ray diffraction data indicates that a peening-induced compressive residual stress develops in the as-deposited film, increases with film thickness, and decreases the ionic conductivity. On the other hand, a thermal-mismatch-induced tensile residual stress develops in the annealed film, increases with annealing temperature, decreases with film thickness, and enhances the ionic conductivity. Ionic conductivities higher than the YSZ bulk are measured in both the as-deposited and annealed YSZ nano-films, indicating the existence of interface enhancement effect on the ionic conductivity. A type of low-energy dislocation structure forms next to the interface by sputtering, which hinders oxygen ion diffusion along the interface and lowers the ionic conductivity. •Residual stress of zirconia film is evaluated by a cos2αsin2ψ method.•A sputtering-induced compressive stress develops in the as-deposited film.•A thermal-mismatch-induced tensile stress develops in the annealed film.•Ionic conductivity is enhanced by tensile residual stress.•Low-energy dislocation structure forms at the interface by sputtering.