Deposition of AlN Thin Films with Cubic Crystal Structures on Silicon Substrates at Room Temperature

Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ∼2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak...

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Published inJapanese Journal of Applied Physics Vol. 39; no. 5A; pp. L423 - L425
Main Authors Ren, Zhong-Min, Lu, Yong-Feng, Goh, Yeow-Whatt, Chong, Tow-Chong, Ng, Mei-Ling, Wang, Jian-Ping, Cheong, Boon-Aik, Liew, Yun-Fook
Format Journal Article
LanguageEnglish
Published 2000
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Summary:Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ∼2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak at 2333 cm -1 originating from cubic AlN polycrystalline was observed. Nitrogen ions not only effectively promote the formation of stable Al–N bonds but also improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed for the thin-film deposition.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L423