Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices?

• Published in: Journal of computational electronics Vol. 7; no. 3; pp. 284 - 287
• Main Authors: Khan, H., Mamaluy, D., Vasileska, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.09.2008; Kluwer Academic Publishers; Springer Nature B.V
• Subjects: Applied sciences; Channels; Computer simulation; Devices; Electrical Engineering; Electronics; Engineering; Exact sciences and technology; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Optical and Electronic Materials; Oxides; Projection; Quantum mechanics; Room temperature; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Small signal analysis; Theoretical; Transistors; FinFETs; CBR; Intrinsic switching speed; Device optimization; Process variation; Performance evaluation; High performance; MOSFET; Device optimization· Intrinsic switching speed, Process variation, CBR; Small signal behavior; Self consistency; Transistor gate; Dual gate transistor; Doping profile; Switching; Optimization; Self aligned technology; Gate oxide; Signal processing; Silicon; Signal analysis; Simulator; Logic devices; Room temperature; Quantum transport
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-008-0194-6

We utilize a fully self-consistent quantum mechanical simulator based on CBR method to optimize 10 nm FinFET devices to meet ITRS projections for High Performance (HP) logic technology devices. Fin width, gate oxide thickness, and doping profiles are chosen to reflect realistic values. We find that the device on-current approaching the value projected by ITRS for HP devices can be obtained using unstrained conventional (Si) channel. Our simulation results also show that quantum nature of transport in ultra small devices significantly enhances the intrinsic switching speed of the device. In addition, small signal analysis has been performed. Sensitivity of device performance to the process variation at room temperature has also been investigated.