Spin-polarizing properties of heterostructures with magnetic nano elements

• Published in: Journal of magnetism and magnetic materials Vol. 322; no. 19; pp. L42 - L48
• Main Authors: Kocharian, A.N., Sahakyan, A.S., Movsesyan, R.M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2010; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron 1D scattering; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in condensed matter; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Giant magneto-resistance; Magnetic heterostructure; Physics; Resonance tunneling; Semiconductor; Spin polarization; Spin polarized transport; Spintronics; Resonance tunneling; Semiconductor; Spin polarization; Electron 1D scattering; Magnetic heterostructure; Giant magneto-resistance; Spintronics; Electron scattering; Semiconductor materials; Magnetization; Resonant tunnelling; Absorption coefficients; Transfer matrix method; Magnetic materials; Transport processes; Magnetoresistance; Heterostructures
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2010.05.002

The problem of electron resonant and non-resonant scatterings on two magnetized barriers is studied in the one-dimension. The transfer-matrix is built up to exactly calculate the coefficient of the electron transmittance through the system of two magnetic barriers with non-collinear magnetizations. The polarization of the transmitted electron wave for resonance and non-resonance transmittances is calculated. The transmittance coefficient and spin polarization can be drastically enhanced and controlled by the angle between the barrier magnetizations.