High ON/OFF ratio single crystal transistors based on ultrathin thienoacene microplates

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 2; no. 27; pp. 5382 - 5388
• Main Authors: Zhao, Xiaoli, Pei, Tengfei, Cai, Bin, Zhou, Shujun, Tang, Qingxin, Tong, Yanhong, Tian, Hongkun, Geng, Yanhou, Liu, Yichun
• Format: Journal Article
• Language: English
• Published: 21.07.2014
• Subjects: Bending machines; Dielectrics; Electronics; Flexibility; Laboratory apparatus; Semiconductor devices; Single crystals; Voltage
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/C4TC00622D

The high ON/OFF ratios of organic single crystal field-effect transistors (FETs) are obtained based on dinaphtho[3,4- d :3′,4′- d ′]benzo[1,2- b :4,5- b ′]dithiophene (Ph5T2) ultrathin microplates. The ON/OFF ratio is over 10 8 with a small sweep range of gate voltage (<45 V) in air at room temperature when the dielectric is modified with octadecyltrichlorosilane (OTS). The high ON/OFF ratio is related to the decreased off-state current by molecular design and the increased on-state current by dielectric modification. The ON/OFF ratio up to 1.3 × 10 7 can also be realized on a flexible transparent substrate. The ultrathin Ph5T2 single crystal provides stable performance even though the flexible device experiences a bending/recovering test for 200 times. The high ON/OFF ratio combined with the high mobility up to 0.51 cm 2 V −1 s −1 and the good flexibility of the ultrathin organic single crystals show their promising potential in electronic applications.