Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that u...
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Published in | Thin solid films Vol. 572; pp. 39 - 43 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.12.2014
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Subjects | |
Online Access | Get full text |
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