Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs

• Published in: Thin solid films Vol. 572; pp. 39 - 43
• Main Authors: Liu, Kuan-Ju, Chang, Ting-Chang, Yang, Ren-Ya, Chen, Ching-En, Ho, Szu-Han, Tsai, Jyun-Yu, Hsieh, Tien-Yu, Cheng, Osbert, Huang, Cheng-Tung
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2014
• Subjects: Degradation; Field effect transistors; Floating body effect (FBE); Hot carrier effect (HCE); Ionization; Offsets; PN junctions; Semiconductor devices; Silicon-on-insulator (SOI); Stresses; Terminals; Thin films; Hot carrier effect (HCE); Silicon-on-insulator (SOI); Floating body effect (FBE)

This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that u...