Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs

• Published in: Thin solid films Vol. 572; pp. 39 - 43
• Main Authors: Liu, Kuan-Ju, Chang, Ting-Chang, Yang, Ren-Ya, Chen, Ching-En, Ho, Szu-Han, Tsai, Jyun-Yu, Hsieh, Tien-Yu, Cheng, Osbert, Huang, Cheng-Tung
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2014
• Subjects: Degradation; Field effect transistors; Floating body effect (FBE); Hot carrier effect (HCE); Ionization; Offsets; PN junctions; Semiconductor devices; Silicon-on-insulator (SOI); Stresses; Terminals; Thin films; Hot carrier effect (HCE); Silicon-on-insulator (SOI); Floating body effect (FBE)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.08.031

This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. •FB–HCS is more serious than that under GB due to the FBE.•FB–HCS becomes less significant with increasing temperature.•FB–HCS degradation is dominated by the ability to retain holes at the PN junction.