Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

This study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal–oxide–semiconductor field effect transistors (MOSFETs). By using the different fabrication methods of pre-TaN, post-TaN and...

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Bibliographic Details
Published inThin solid films Vol. 620; pp. 43 - 47
Main Authors Lu, Ying-Hsin, Chang, Ting-Chang, Ho, Szu-Han, Chen, Ching-En, Tsai, Jyun-Yu, Liu, Kuan-Ju, Liu, Xi-Wen, Lin, Chien-yu, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Yen, Wei-Ting
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2016
Subjects
Devices
Diffusion
Diffusion layers
Fast I–V
Field effect transistors
Gate fabrication
Gates
Hafnium oxide
NBTI
Nitrogen
Semiconductors
Threshold voltage
Hafnium oxide
Fast I–V
NBTI
Gate fabrication
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Summary:This study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal–oxide–semiconductor field effect transistors (MOSFETs). By using the different fabrication methods of pre-TaN, post-TaN and post-TiN annealing, the work-function difference between the gate material and the semiconductor can be adjusted, leading to apparent differences in threshold voltage (Vth). In addition, the results of slow and fast I–V NBTI measurements show that the amount of the bulk trapping in the post-TiN device is the highest, followed by the post-TaN device and then the pre-TaN device. In addition, a nitrogen interstitial defect phenomenon, resulting in a temporary shift of threshold voltage (Vth) which is highest in the post-TiN the lowest in the pre-TaN device, is determined by double sweep fast I–V measurements. •The double sweep fast I-V measurement indicates that the recoverable trapped holes are process-related pre-existing defects and these defects are induced by nitrogen diffusion from the thermal annealing process.•The nitrogen generates the nitrogen interstitials when the nitrogen diffusion from TaN/TiN gate to HfO2 layer with post-TaN/TiN annealing process.
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.09.062