Effect of NaOH solution on surface textured ZnO: Al films prepared by pulsed direct current magnetron sputtering

• Published in: Materials science in semiconductor processing Vol. 15; no. 5; pp. 555 - 558
• Main Authors: Wang, Ying, Wang, Hualin, Liu, Chaoqian, Wang, Yun, Peng, Shou, Chai, Weiping
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.10.2012; Elsevier
• Subjects: Applied sciences; Circuit properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Haze; Integrated optoelectronics. Optoelectronic circuits; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical and optoelectronic circuits; Optoelectronic materials; Other heat and thermomechanical treatments; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Texture; Thin films; Treatment of materials and its effects on microstructure and properties; ZnO:Al; Thin films; Optoelectronic materials; ZnO:Al; Texture; Haze; Optoelectronics; Electrical conductivity; II-VI compound; Doped materials; Optoelectronic devices; Etching; Conducting materials; Substrat temperature; Sodium hydroxide; Surface structure; Cathode sputtering; Metal coating; Direct current; Ambient temperature; Aluminium additions; Zinc oxide; Microstructure; Transparent material; Pulse current
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2012.04.007

Transparent conducting Al-doped ZnO (ZnO:Al, AZO) thin films were prepared at substrate temperature of 270°C by pulsed direct current magnetron sputtering. NaOH solution (5wt%) was employed to etch the AZO films at room temperature, and the surface textured AZO films were obtained successfully. The relationship between the surface textured structures and the etching process controlled by etching time was discussed. The textured morphology of the etched AZO films became clear as increasing the etching time, and the AZO film etched for 30min exhibited uniformly and distinctly crater-like surface textured structure. Correspondingly, the haze and the resistivity increased with the increasing etching time. And the resistivity of the AZO film etched for 30min was 3.2×10−3Ωcm.