Contact-free defect investigation of wafer-annealed Fe-doped SI-InP

• Published in: Materials science in semiconductor processing Vol. 9; no. 1; pp. 355 - 358
• Main Authors: Hahn, S., Dornich, K., Hahn, T., Köhler, A., Niklas, J.R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.02.2006; Elsevier Science
• Subjects: Applied sciences; Defects; Electronics; Exact sciences and technology; InP; Materials; MD-PICTS; MDP; MDP; InP; MD-PICTS; Defects; Binary compound; Doping; Microwave; Photo-induced transient spectroscopy; Iron; Indium phosphide; Inorganic compound; Transients; Defect; Silicon; Wafer; Electrical characteristic; Defect states; Annealing; Defect level; Electrical properties; Doped materials; Transition metal; Induced current; Spatial distribution; Photoconductivity; III-V semiconductors
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2006.01.077

The newly developed methods of microwave detected photoconductivity (MDP) and microwave detected photo-induced current transient spectroscopy (MD-PICTS) were applied to characterize defects in as-grown and wafer annealed Fe-doped SI-InP. It is shown that as-grown samples differ in their defect content in dependence on the crystal position they originate from. In wafer-annealed samples an equivalent set of defect levels is prominent, which is independent of the crystal position of the samples. Some of the levels, which occur in wafer-annealed samples, seem to be due to the annealing process; however, their origins are still under investigation. From the experimental results it must be furthermore concluded that the occurrence of different defect levels before and after the annealing process may have some impact on the spatial distribution of the electrical properties of the samples.