Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

•We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under rev...

Full description

Saved in:
Bibliographic Details
Published inSolid-state electronics Vol. 119; pp. 1 - 4
Main Authors Martyniuk, Piotr, Benyahia, Djalal, Kowalewski, Andrzej, Kubiszyn, Łukasz, Stępień, Dawid, Gawron, Waldemar, Rogalski, Antoni
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2016
Subjects
Online AccessGet full text

Cover

Loading…