Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

• Published in: Solid-state electronics Vol. 119; pp. 1 - 4
• Main Authors: Martyniuk, Piotr, Benyahia, Djalal, Kowalewski, Andrzej, Kubiszyn, Łukasz, Stępień, Dawid, Gawron, Waldemar, Rogalski, Antoni
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2016
• Subjects: Architecture; Cut-off; GaAs immersion lens; Gallium arsenide; Immersion; Indium arsenides; Lenses; PIN IR detectors; Substrates; T2SLs InAs/GaSb; Wavelengths; PIN IR detectors; T2SLs InAs/GaSb; GaAs immersion lens

•We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under rev...