Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

• Published in: Solid-state electronics Vol. 119; pp. 1 - 4
• Main Authors: Martyniuk, Piotr, Benyahia, Djalal, Kowalewski, Andrzej, Kubiszyn, Łukasz, Stępień, Dawid, Gawron, Waldemar, Rogalski, Antoni
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2016
• Subjects: Architecture; Cut-off; GaAs immersion lens; Gallium arsenide; Immersion; Indium arsenides; Lenses; PIN IR detectors; Substrates; T2SLs InAs/GaSb; Wavelengths; PIN IR detectors; T2SLs InAs/GaSb; GaAs immersion lens
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2016.01.012

•We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under reverse bias 200mV.•At T=300K presented detector exhibits detectivity, D∗∼4×109cmHz1/2/W at 300K, under 500mV.•Presented results are higher than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.•Detectivity for MWIR (λ50%cut-off=5.1μm) multi-layer MCT Auger suppressed, unbiased heterostructure with comparable λ50%cut-off=5.2μm, GaAs immersion lens is one order of magnitude higher than PIN T2SLs InAs/GaSb due to SRH defects. In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2μm at 230K. The 1.1mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2×1010cmHz1/2/W at 230K, under reverse bias 100mV and ∼4×109cmHz1/2/W at 300K, under 500mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.