Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

•We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under rev...

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Published inSolid-state electronics Vol. 119; pp. 1 - 4
Main Authors Martyniuk, Piotr, Benyahia, Djalal, Kowalewski, Andrzej, Kubiszyn, Łukasz, Stępień, Dawid, Gawron, Waldemar, Rogalski, Antoni
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2016
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Abstract •We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under reverse bias 200mV.•At T=300K presented detector exhibits detectivity, D∗∼4×109cmHz1/2/W at 300K, under 500mV.•Presented results are higher than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.•Detectivity for MWIR (λ50%cut-off=5.1μm) multi-layer MCT Auger suppressed, unbiased heterostructure with comparable λ50%cut-off=5.2μm, GaAs immersion lens is one order of magnitude higher than PIN T2SLs InAs/GaSb due to SRH defects. In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2μm at 230K. The 1.1mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2×1010cmHz1/2/W at 230K, under reverse bias 100mV and ∼4×109cmHz1/2/W at 300K, under 500mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.
AbstractList •We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under reverse bias 200mV.•At T=300K presented detector exhibits detectivity, D∗∼4×109cmHz1/2/W at 300K, under 500mV.•Presented results are higher than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.•Detectivity for MWIR (λ50%cut-off=5.1μm) multi-layer MCT Auger suppressed, unbiased heterostructure with comparable λ50%cut-off=5.2μm, GaAs immersion lens is one order of magnitude higher than PIN T2SLs InAs/GaSb due to SRH defects. In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2μm at 230K. The 1.1mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2×1010cmHz1/2/W at 230K, under reverse bias 100mV and ∼4×109cmHz1/2/W at 300K, under 500mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.
In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength similar to 5.2 mu m at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, similar to 2 10 super(10) cm Hz super(1/2)/W at 230 K, under reverse bias 100 mV and similar to 4 10 super(9) cm Hz super(1/2)/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.
Author Kubiszyn, Łukasz
Kowalewski, Andrzej
Gawron, Waldemar
Martyniuk, Piotr
Stępień, Dawid
Benyahia, Djalal
Rogalski, Antoni
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T2SLs InAs/GaSb
GaAs immersion lens
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Snippet •We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to...
In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off...
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SubjectTerms Architecture
Cut-off
GaAs immersion lens
Gallium arsenide
Immersion
Indium arsenides
Lenses
PIN IR detectors
Substrates
T2SLs InAs/GaSb
Wavelengths
Title Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
URI https://dx.doi.org/10.1016/j.sse.2016.01.012
https://search.proquest.com/docview/1816023321
Volume 119
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