Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
•We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under rev...
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| Published in | Solid-state electronics Vol. 119; pp. 1 - 4 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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01.05.2016
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| Abstract | •We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under reverse bias 200mV.•At T=300K presented detector exhibits detectivity, D∗∼4×109cmHz1/2/W at 300K, under 500mV.•Presented results are higher than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.•Detectivity for MWIR (λ50%cut-off=5.1μm) multi-layer MCT Auger suppressed, unbiased heterostructure with comparable λ50%cut-off=5.2μm, GaAs immersion lens is one order of magnitude higher than PIN T2SLs InAs/GaSb due to SRH defects.
In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2μm at 230K. The 1.1mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2×1010cmHz1/2/W at 230K, under reverse bias 100mV and ∼4×109cmHz1/2/W at 300K, under 500mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates. |
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| AbstractList | •We presented the mid-wave single (λ50%cut-off=5.2μm) pixel mesa PIN T2SLs InAs/GaSb detector with ∼1.1mm GaAs substrate converted into immersion lens to increase detectivity by ∼10.•At T=230K reached by thermoelectrical cooling, presented detector exhibits detectivity, D*∼2×1010cmHz1/2/W, under reverse bias 200mV.•At T=300K presented detector exhibits detectivity, D∗∼4×109cmHz1/2/W at 300K, under 500mV.•Presented results are higher than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.•Detectivity for MWIR (λ50%cut-off=5.1μm) multi-layer MCT Auger suppressed, unbiased heterostructure with comparable λ50%cut-off=5.2μm, GaAs immersion lens is one order of magnitude higher than PIN T2SLs InAs/GaSb due to SRH defects.
In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2μm at 230K. The 1.1mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2×1010cmHz1/2/W at 230K, under reverse bias 100mV and ∼4×109cmHz1/2/W at 300K, under 500mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates. In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength similar to 5.2 mu m at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, similar to 2 10 super(10) cm Hz super(1/2)/W at 230 K, under reverse bias 100 mV and similar to 4 10 super(9) cm Hz super(1/2)/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates. |
| Author | Kubiszyn, Łukasz Kowalewski, Andrzej Gawron, Waldemar Martyniuk, Piotr Stępień, Dawid Benyahia, Djalal Rogalski, Antoni |
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| CitedBy_id | crossref_primary_10_1016_j_infrared_2019_01_001 crossref_primary_10_1016_j_spmi_2017_07_037 crossref_primary_10_1016_j_spmi_2018_05_020 crossref_primary_10_1088_1361_6463_acdefa crossref_primary_10_1016_j_materresbull_2021_111424 crossref_primary_10_1002_adpr_202100094 crossref_primary_10_1007_s11082_019_1779_y crossref_primary_10_1007_s11082_017_1308_9 crossref_primary_10_1016_j_sna_2020_111908 crossref_primary_10_1364_AO_385916 crossref_primary_10_1016_j_sna_2020_112008 |
| Cites_doi | 10.1063/1.2790078 10.1007/s11664-006-0254-2 10.1117/12.828421 10.1088/0268-1242/25/8/085010 10.1063/1.4801764 10.1063/1.2800808 10.1016/j.infrared.2004.03.016 10.1088/0022-3727/44/7/075102 10.1063/1.2760153 10.1063/1.3005196 10.1063/1.3148326 10.1007/s11664-005-0036-2 |
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| References_xml | – volume: 7467 year: 2009 ident: b0005 article-title: State-of-the-art type II antimonide-based superlattice photodiodes for infrared detection and imaging publication-title: Proc SPIE contributor: fullname: Bogdanov – volume: 102 start-page: 141107 year: 2013 ident: b0060 article-title: Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control publication-title: Appl Phys Lett contributor: fullname: Chuang – volume: 34 start-page: 880 year: 2005 ident: b0065 article-title: Minority carrier lifetime in p-HgCdTe publication-title: J Electron Mater contributor: fullname: Shih – volume: 35 start-page: 1275 year: 2006 ident: b0070 article-title: Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays publication-title: J Electron Mater contributor: fullname: Jones – volume: 25 start-page: 085010 year: 2010 ident: b0040 article-title: 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| Title | Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition |
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