Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology

The RT-operation of a single-electron MOS memory with a defined quantum dot fabricated by sidewall patterning technique based on conventional VLSI technologies has been demonstrated without the aid of electron beam lithography. Sidewall patterning technique shows a good uniformity and controllabilit...

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Published inJapanese Journal of Applied Physics Vol. 41; no. Part 1, No. 4B; pp. 2606 - 2610
Main Authors Sung, Suk-Kang, Kim, Dae Hwan, Sim, Jae-Sung, Kim, Kyung Rok, Lee, Yong Kyu, Lee, Jong Duk, Chae, Soo Doo, Kim, Byung Man, Park, Byung-Gook
Format Journal Article
LanguageEnglish
Published 01.04.2002
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Summary:The RT-operation of a single-electron MOS memory with a defined quantum dot fabricated by sidewall patterning technique based on conventional VLSI technologies has been demonstrated without the aid of electron beam lithography. Sidewall patterning technique shows a good uniformity and controllability as well as high throughput. The fabricated memory devices show quantized threshold voltage shifts at RT. Time-dependant measurement of drain current shows discrete electron injection to the quantum dot. In addition, fabricated devices have good subthreshold swing and retention characteristics. 9 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.2606