TEM dislocations characterization of InxGa1−xAs/InP (100) (x=0.82) on mismatched InP substrate

• Published in: Materials letters Vol. 106; pp. 222 - 224
• Main Authors: Zhao, L., Sun, J.G., Guo, Z.X., Miao, G.Q.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2013
• Subjects: Aerospace materials; Ceramics; InxGa1−xAs/InP; Misfit dislocations; TEM; temperature; transmission electron microscopy; vapors; InxGa1−xAs/InP; Aerospace materials; Misfit dislocations; Ceramics; TEM
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2013.04.116

Dislocation behavior in InxGa1−xAs/InP (100) (x=0.82) grown by low pressure chemical vapor deposition (LP-MOCVD) at temperature about 430°C was analyzed thoroughly by [110] cross-section transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and high resolution transmission electron microscopy (HRTEM). The 2% lattice mismatch between InP (100) and InxGa1−xAs (x=0.82) results in various types of defects such as stacking faults as well as 60° and 90° threading dislocations. Very high density of threading dislocation (TD) was shown in the InxGa1−xAs (x=0.82) epilayer. The epilayer was incompletely strain relaxed by the formation and multiplication of MDs. •InxGa1−xAs (x=0.82) detectors with the cut-off wavelength of 2.5μm grown by low pressure chemical vapor deposition (LP-MOCVD).•The defects structure of a ternary epitaxial layer as discussed deeply.•Various types of defects such as stacking faults as well as 60° and 90° threading dislocations were identified near interface.•The plastic relaxation of strained heterostructures was incompletely strain relaxed by the formation and multiplication of misfit dislocations (MDs).