Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states

• Published in: Materials science in semiconductor processing Vol. 15; no. 5; pp. 461 - 466
• Main Authors: Fiat, Songül, Çankaya, Güven
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.10.2012; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Diodes; Electrical characterization; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Interface states; Interfaces; Physics; Schottky barrier diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface double layers, schottky barriers, and work functions; Schottky barrier diodes; Interface states; Electrical characterization; Si; Interface state; Density of states; Voltage current curve; Interface electron state; Pressure dependence; Pressure effect; Fermi level; p type semiconductor; Hydrostatic pressure; Silicon; Barrier height; Schottky barrier diode; Interface; Schottky barrier; Electrical characteristic
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2012.03.004

Mn/p-Si Schottky barrier diode (SBD) electrical parameters and interface state density have been investigated with current–voltage (I–V) characteristics and Cheung's functions employing hydrostatic pressure. The interface state density of the diodes has an exponential growth with bias from the midgap towards the top of the valance band. We have seen that the Schottky barrier height (SBH) for Mn/p-Si SBD has a pressure coefficient of 1.61meV/kbar (16.1meV/GPa). We have reported that the p-type barrier height exhibited a weak pressure dependence, accepting that the Fermi level at the interface do not shift as a function of the pressure.