Atomically resolved InP(110) surface observed with noncontact ultrahigh vacuum atomic force microscope

Atomic resolution imaging of the cleaved InP(110) surface was demonstrated using an ultrahigh vacuum atomic force microscope (UHV-AFM) in a noncontact mode, for the first time. The force gradient acting on the tip was detected by the frequency modulation (FM) detection method. A rectangular lattice...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 8B; pp. L1086 - L1088
Main Authors UEYAMA, H, OHTA, M, SUGAWARA, Y, MORITA, S
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1995
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Image forming
Atomic force microscopy
Crystal defects
Inorganic compounds
Semiconductor materials
Indium phosphides
Surfaces
Binary compounds
Experimental study
Ultrahigh vacuum
High-resolution methods
Surface structure
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Summary:Atomic resolution imaging of the cleaved InP(110) surface was demonstrated using an ultrahigh vacuum atomic force microscope (UHV-AFM) in a noncontact mode, for the first time. The force gradient acting on the tip was detected by the frequency modulation (FM) detection method. A rectangular lattice could be clearly resolved. Atomic defects were also clearly and reproducibly observed. These results suggest that the noncontact UHV-AFM has potential for imaging III-V compound semiconductor surfaces with true atomic-scale lateral resolution.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.l1086