Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation

• Published in: Journal of materials science. Materials in electronics Vol. 19; no. 2; pp. 171 - 173
• Main Authors: Ohyama, H., Shitogiden, H., Takakura, K., Shigaki, K., Kuboyama, S., Kamesawa, C., Simoen, E., Claeys, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.02.2008; Springer; Springer Nature B.V
• Subjects: Applied sciences; Capacitance; Characterization and Evaluation of Materials; Chemistry and Materials Science; DX centres; Electron irradiation; Electronics; Exact sciences and technology; Fluence; Irradiation; Light emitting diodes; Materials; Materials Science; Optical and Electronic Materials; Optoelectronic devices; Radiation damage; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Deep Level Transient Spectroscopy; Reverse Current; Electron Irradiation; Proton Irradiation; Deep Level Transient Spectroscopy Spectrum; Deep level transient spectrometry; Voltage current curve; Electron irradiation; Optoelectronic device; Capacitance; Radiation damage; Voltage capacity curve; Light emitting diode
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9302-9

The electric characteristics of proton and electron irradiated Light emitting diodes are investigated. The reverse current increased proportional with the proton fluence, while the capacitance decreased for increasing irradiation. DLTS measurements revealed the DX center and the spectrum grows for higher irradiation fluence. For electron irradiations, the shape of the I/V and C/V characteristic did not changed, although for higher irradiation fluence rates, the reverse current increased and the capacitance decreased.