Characteristics of Al-doped, Ga-doped and In-doped zinc-oxide films as transparent conducting electrodes in organic light-emitting diodes

• Published in: Current applied physics Vol. 10; no. 3; pp. S488 - S490
• Main Authors: Park, Se Hun, Park, Ji Bong, Song, Pung Keun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2010; 한국물리학회
• Subjects: AZO; GZO; Hybrid functional films; OLED; ZIO; 물리학; ZIO; OLED; GZO; AZO; Hybrid functional films
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2010.02.036

The AZO, GZO and ZIO films were deposited on glass substrates by DC magnetron sputtering at substrate temperatures ranging from RT to 300 °C using impurity-doped ZnO targets containing 2.0 wt.% Al 2O 3, 5.56 wt.% Ga 2O 3 and 9.54 wt.% In 2O 3, respectively. The lowest resistivity of 6.41 × 10 –4 Ω cm was obtained for the GZO films deposited at 300 °C. The AZO, GZO and ZIO films were used as an anode contact to fabricate organic emitting diodes. The turn-on voltage at current density of 0.01 mA/cm 2 is 6.42, 9.33 and 12.19 V for the devices with AZO, ZIO and GZO anodes, respectively. These results can be explained by carrier density and resistivity distribution of AZO, ZIO and GZO films.