Investigation of Electrophysical Properties of ITO Films

The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperatur...

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Published inRussian physics journal Vol. 63; no. 7; pp. 1139 - 1143
Main Authors Zhidik, Yu. S., Troyan, P. E., Kozik, V. V., Kozyukhin, S. A., Zabolotskaya, A. V., Kuznetsova, S. A.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.11.2020
Springer
Subjects
Analysis
Annealing
Condensed Matter Physics
Crystals
Electric properties
Electrical conductivity
Electrons
Hadrons
Heavy Ions
Investigations
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
Semiconductors
Structure
Theoretical
charge carrier mobility
electrical conductivity
resistance
ITO films
charge carrier concentration
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Summary:The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-020-02167-4