On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment
A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a hi...
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Published in | Sensors and actuators. B, Chemical Vol. 209; pp. 658 - 663 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
31.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88mV/pH), a higher current sensitivity (−56.09μA/pHmm), a lower drift rate (1.41μA/hmm), an extremely low hysteresis (0.4mV), and a lower voltage decay rate (−0.14mV/pHday) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0925-4005 1873-3077 |
DOI: | 10.1016/j.snb.2014.12.025 |