On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a hi...

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Published inSensors and actuators. B, Chemical Vol. 209; pp. 658 - 663
Main Authors Chen, Chun-Chia, Chen, Huey-Ing, Liu, Hao-Yeh, Chou, Po-Cheng, Liou, Jian-Kai, Liu, Wen-Chau
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.03.2015
Subjects
Actuators
Electric potential
Field effect transistors
H2O2 surface treatment
Hydrogen peroxide
Interference effect
ISFET
pH sensor
Semiconductor devices
Voltage
X-ray photoelectron spectroscopy
ISFET
Interference effect
H2O2 surface treatment
pH sensor
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Summary:A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88mV/pH), a higher current sensitivity (−56.09μA/pHmm), a lower drift rate (1.41μA/hmm), an extremely low hysteresis (0.4mV), and a lower voltage decay rate (−0.14mV/pHday) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2014.12.025