Technology projections of III–V devices down to 11 nm: importance of electrostatics and series resistance

• Published in: Electronics letters Vol. 49; no. 13; pp. 832 - 833
• Main Authors: Oh, S, Wong, H.-S.P
• Format: Journal Article
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 20.06.2013; Institution of Engineering and Technology
• Subjects: Applied sciences; carrier transport; circuit performance estimation; Computer science; control theory; systems; Computer systems and distributed systems. User interface; Electronics; electrostatics; elemental semiconductors; energy delay product; Exact sciences and technology; field effect transistors; FO4 delay; germanium; high mobility channel devices; high‐mobility channel solution; III‐V devices; III‐V field effect transistors; III‐V semiconductors; Organic and inorganic circuits and devices; physics‐based compact model; power supply; semiconductor device models; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; series resistance; size 11 nm; Software; Transistors; electrostatics; high mobility channel devices; carrier transport; circuit performance estimation; germanium; FO4 delay; III-V field effect transistors; III-V devices; high-mobility channel solution; elemental semiconductors; series resistance; field effect transistors; size 11 nm; semiconductor device models; energy delay product; physics-based compact model; Ge; III-V semiconductors; power supply; Performance evaluation; Field effect transistor; Electric generator; Scalability; Size effect; Charge carrier mobility; Power supply; Series resistance; Modeling; Delay
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2013.0505

As device dimensions become increasingly challenging to scale down, the high-mobility channel solution is gaining more interest. However, will good carrier transport alone guarantee the continuation of higher drive current at shorter dimensions and lower power supply? The technology scaling of FO4 delay and energy delay product of III–V/Ge logic for beyond-22-nm technologies was investigated. The circuit performance estimation was projected down to 11 nm technology by using a physics-based compact model developed for III–V field effect transistors. The analysis shows that the realisation of good electrostatics and low series resistance is crucial for the scalability of high mobility channel devices.