Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires 1 1 Contribution of NIST, an agency of the U.S. government, not subject to copyright. that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and...

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Published inSensors and actuators. A. Physical. Vol. 166; no. 2; pp. 177 - 186
Main Authors Brown, J.J., Baca, A.I., Bertness, K.A., Dikin, D.A., Ruoff, R.S., Bright, V.M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2011
Subjects
Actuators
Clamps
Failure
Gallium Nitride
Mechanical Testing
MEMS
Microelectromechanical systems
Nanostructure
Nanowire
Nanowires
Nitrides
Self assembly
Single Crystal
Strain
Tensile Loading
Nanowire
Tensile Loading
Mechanical Testing
MEMS
Gallium Nitride
Single Crystal
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Summary:This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires 1 1 Contribution of NIST, an agency of the U.S. government, not subject to copyright. that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042 ± 0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0 ± 1.7 GPa to 7.5 ± 3.4 GPa. Failure modes included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS test actuator.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2010.04.002