Simultaneous Light-Emitting Light-Detecting Functionality of InGaN/GaN Multiple Quantum Well Diodes

The InGaN/GaN multiple-quantum-well (MQW) diode has selectable functionalities with emission and detection in the visible region due to the MQW-based p-n junction structure, which is employed to achieve on-chip optocoupling. Here, we propose to fabricate a suspended InGaN/GaN MQW diode on an III-nit...

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Bibliographic Details
Published inIEEE electron device letters Vol. 38; no. 12; pp. 1684 - 1687
Main Authors Jiang, Yan, Shi, Zheng, Zhang, Shuai, Yuan, Jialei, Hu, Zhenzong, Shen, Xiangfei, Zhu, Bingcheng, Wang, Yongjin
Format Journal Article
LanguageEnglish
Published IEEE 01.12.2017
Subjects
Gallium nitride
III-nitride-on-silicon platform
InGaN/GaN multiple-quantum-well diode
Light emitting diodes
Photoconductivity
Photonics
Quantum well devices
simultaneous light-emitting light-detecting function
System-on-chip
Visible light communication
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Summary:The InGaN/GaN multiple-quantum-well (MQW) diode has selectable functionalities with emission and detection in the visible region due to the MQW-based p-n junction structure, which is employed to achieve on-chip optocoupling. Here, we propose to fabricate a suspended InGaN/GaN MQW diode on an III-nitride-on-silicon platform by a combination of silicon removal and III-nitride backside etching. Spatial simultaneous light-emitting light-detecting functionality, in which the detected light comes from an external light source, is experimentally demonstrated, endowing the MQW diode with the capability of contributing to intelligent displays as well as full-duplex visible light communication. As a transmitter, the InGaN/GaN MQW diode demonstrates out-of-plane data transmission at 120 Mb/s using visible light.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2760318