Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multis...

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Bibliographic Details
Published inIEEE electron device letters Vol. 36; no. 6; pp. 552 - 554
Main Authors Wei Zhang, Ying Hu, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Hsin-Lu Chen, Yu-Ting Su, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Min-Chen Chen, Jin-Cheng Zheng, Hua-Ching Lin, Sze, Simon M.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2015
Subjects
Fitting
Ions
multi-state
Nonvolatile memory
Random access memory
Resistance
RRAM
Schottky emission
Space-Charge Limited-Current
Switches
Tin
triple ions effect
RRAM
space-charge limited-current
Schottky emission
multi-state
triple ions effect
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Summary:In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2424996