An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductan...

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Bibliographic Details
Published inIEEE electron device letters Vol. 36; no. 8; pp. 772 - 774
Main Authors Wei Zhang, Ying Hu, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Hsin-Lu Chen, Yu-Ting Su, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Wan-Ching Su, Jin-Cheng Zheng, Ya-Chi Hung, Sze, Simon M.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2015
Subjects
Electrodes
electronic synapse device
Immune system
Neuromorphics
RRAM
solid electrolyte
Solids
spike-timing-dependent plasticity learning (STDP)
Switches
Timing
Tin
spike-timing-dependent plasticity learning (STDP)
RRAM
solid electrolyte
electronic synapse device
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Summary:The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device's potential for use as an electronic synapse device for neuromorphic systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2448756