GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

• Published in: IEEE electron device letters Vol. 36; no. 5; pp. 448 - 450
• Main Authors: Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
• Format: Journal Article
• Language: English
• Published: IEEE 01.05.2015
• Subjects: Aluminum gallium nitride; Dielectrics; Gallium nitride; Leakage currents; Logic gates; Silicon nitride; LPCVD; silicon nitride; MIS-HEMT; Gallium nitride; gate dielectric

In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plas...