GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plas...

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Bibliographic Details
Published inIEEE electron device letters Vol. 36; no. 5; pp. 448 - 450
Main Authors Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Aluminum gallium nitride
Dielectrics
Gallium nitride
Leakage currents
Logic gates
Silicon nitride
LPCVD
silicon nitride
MIS-HEMT
Gallium nitride
gate dielectric
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Summary:In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiN x , including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2409878