GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plas...
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| Published in | IEEE electron device letters Vol. 36; no. 5; pp. 448 - 450 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.05.2015
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| Subjects | |
| Online Access | Get full text |
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| Abstract | In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiN x , including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage. |
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| AbstractList | In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiN x , including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage. |
| Author | Zhihua Dong Shenghou Liu Mengyuan Hua Yong Cai Chen, Kevin J. Baoshun Zhang Cheng Liu Shu Yang Kai Fu |
| Author_xml | – sequence: 1 surname: Mengyuan Hua fullname: Mengyuan Hua email: mhua@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China – sequence: 2 surname: Cheng Liu fullname: Cheng Liu organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China – sequence: 3 surname: Shu Yang fullname: Shu Yang organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China – sequence: 4 surname: Shenghou Liu fullname: Shenghou Liu organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China – sequence: 5 surname: Kai Fu fullname: Kai Fu organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 6 surname: Zhihua Dong fullname: Zhihua Dong organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 7 surname: Yong Cai fullname: Yong Cai organization: Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China – sequence: 8 surname: Baoshun Zhang fullname: Baoshun Zhang organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China – sequence: 9 givenname: Kevin J. surname: Chen fullname: Chen, Kevin J. email: eekjchen@ust.hk organization: Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China |
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| Cites_doi | 10.1088/0960-1317/6/1/001 10.1109/LED.2012.2185921 10.1063/1.1710030 10.1109/LED.2013.2279846 10.1109/LED.2012.2188016 10.1002/pssa.201000631 10.1016/S0022-0248(01)00617-0 10.1109/LED.2013.2286090 10.1109/LED.2013.2279844 10.1109/LED.2014.2322379 10.1109/IPEC.2010.5542030 |
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| Snippet | In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based... |
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| SubjectTerms | Aluminum gallium nitride Dielectrics Gallium nitride Leakage currents Logic gates Silicon nitride |
| Title | GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric |
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