Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initializ...

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Bibliographic Details
Published inIEEE electron device letters Vol. 38; no. 2; pp. 179 - 182
Main Authors Zhuo-Rui Wang, Yu-Ting Su, Yi Li, Ya-Xiong Zhou, Tian-Jian Chu, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Sze, Simon M., Xiang-Shui Miao
Format Journal Article
LanguageEnglish
Published IEEE 01.02.2017
Subjects
1T1R RRAM
Boolean logics
Electric potential
Electrodes
Logic functions
Logic gates
logic in memory
nonvolatile
Nonvolatile memory
Transistors
Writing
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ISSN0741-3106
1558-0563
DOI10.1109/LED.2016.2645946

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Summary:Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2645946