A study on stimulated emission from erbium in silicon
Prospects of stimulated emission from erbium in silicon have been analyzed by a Shockley–Read–Hall (SRH) model. A two-level system was considered for calculation of optical gain and the laser threshold. For an optical cavity of 300 μm with mirror reflectivities of 90% and an optimistic absorption co...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 105; no. 1; pp. 146 - 149 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.12.2003
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Subjects | |
Online Access | Get full text |
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Summary: | Prospects of stimulated emission from erbium in silicon have been analyzed by a Shockley–Read–Hall (SRH) model. A two-level system was considered for calculation of optical gain and the laser threshold. For an optical cavity of 300
μm with mirror reflectivities of 90% and an optimistic absorption coefficient of 5
cm
−1, a population inversion of 1.4×10
18
cm
−3 was estimated as the threshold value. Achievement of the lasing condition was found feasible, but only for certain conditions of erbium activation. Non-radiative de-excitation routes were found to have strong influence on the erbium activity. On the assumption of 10
19
cm
−3 of optically active erbium sites with an overall spectral linewidth of 1
Å, linear increase of optical power in the laser cavity has been estimated for injected carrier densities above 10
18
cm
−3. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2003.08.033 |