Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates

A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 24; no. 24; pp. 2232 - 2234
Main Authors Hsieh, Cheng-Yu, Lin, Bo-Wen, Cho, Hsin-Ju, Wang, Bau-Ming, Chang, Nancy, Wu, Yew-Chung Sermon
Format Journal Article
LanguageEnglish
Published IEEE 15.12.2012
Subjects
Gallium nitride
Light emitting diodes
Light-emitting diode (LED)
nano pattern
Nanopatterning
Nanoscale devices
Quantum wells
sapphire
Substrates
Online AccessGet full text

Cover

More Information
Summary:A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2224855